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Profile |
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| Name and Affiliation |
Hideki Murakami
hideki hiroshima-u.ac.jp
Graduate School of Advanced Science and Matter, Hiroshima Univ.
Quantum Material Science
Reserch Associate |
| Education and Professional Background |
| 1996.3. |
B. E. in Hiroshima Univ. |
| 1998.3. |
M. E. in Graduate School of Engineering, Hiroshima Univ. |
| 1999.3. |
Withdrawing from graduate school of Engineering(doctoral course), Hiroshima Univ. without a diploma. |
| 1999.4. |
Research Associate, Graduate School of Engineering, Hiroshima Univ. |
| 2002.4-present |
Research Associate, Graduate School of Advanced Science and Matter, Hiroshima Univ. |
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| Academic Societies |
The Japan Society of Applied Physics.
The Institute of Electronics, Information and Communication Engineers. |
| World Class Research Results |
Threshold Voltage Fluctuation of MOSFETs Induced by Tunnel Leakage Current
Electrical Characterization of AlON Gate Dielectric Formed by Layer--by--Layer CVD |
| Pioneering Research Results |
Evaluation of Impurity Depletion Effect for Sub-100nm nMOSFETs
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| Cooperation of Industry-Government-University |
CREST |
| Important Publications |
| 1. |
A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose "Memory Operation of Silicon Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Field-Effect Transistors" Jpn. J. Appl. Phys. Vol. 40 No. 7B (2001)pp. L721-L723. |
| 2. |
M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Miyazaki and M. Hirose "Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current" IEEE Trans. on Electron Devices Vol. 48 No. 2 (2001)pp. 259-264. |
| 3. |
H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama and S. Miyazaki "Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation" Inter. Conf. on Solid State Devices and Materials (Nagoya, Sept. 17-19, 2002) pp. 712-713. |
| 4. |
H. Murakami, T. Mihara, S. Miyazaki and M. Hirose "Carrier Depletion Effect in the n+Poly-Si Gate Side-Wall/SiO2 Interfaces as Evaluated by Gate Tunnel Leakage Current" Jpn. J. Appl. Phys. Vol. 41 No. 5A (2002)pp. L512-L514. |
| 5. |
A. Suyama, H. Yokoi, M. Narasaki, W. Mizubayashi, H. Murakami and S. Miyazaki "Photoemission Technical Meeting of Aluminum Oxynitride/Si(100) Heterostructures-Chemical Bonding Features and Energy Band Lineup" Inter. Conf. on Solid State Devices and Materials (Nagoya, Sept. 17-19, 2002) pp.760-761. |
| 6. |
Y. Darma, H. Murakami and S. Miyazaki "Formation of Nanometer Silicon Dots with Germanium Core by Highly-Slective Low-Pressure Chemical Vapor Deposition" Jpn. J. Appl. Phys. Vol. 42 No. 6Ｂ (2003)pp. 4129-4133. |
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| Laboratoy Page |
http://home.hiroshima-u.ac.jp/semicon/ |
| Personal Page |
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COE Program