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COE Members top	Name and Affiliation Seiichiro Higashi sehigahiroshima-u.ac.jp Hiroshima University, Graduate School of Advanced Science of Matter Department of Electrical Engineering Associate Professor Education and Professional Background 1989 .3. B. S. received from Kyusyu University, Department of Physics 1991.3. M. S. received from Kyusyu University, Graduate School of High Energy Engineering Science 1991.4. Visiting Researcher at University of California Los Angeles, Department of Physics 1992.4. Joined Seiko Epson Corporation, R&D division Sep. 2001 ph. D received from Tokyo University of Agriculture and Technology 2001.9. ph. D received from Tokyo University of Agriculture 2003.4. Associate Professor at Hiroshima University Academic Societies Japan Society of Applied Physics World Class Research Results In-situ observation of extremely short period melting and crystallization process of Si thin film induced by excimer laser irradiation. Reduction of defects in polycrystalline Si film using oxygen plasma. Low temperature formation of high-quality SiO2/Si interface using ECR plasma CVD. Development of high-performance polycrystalline Si thin-film transistor using defect reduction process technologies. Pioneering Research Results Development of low temperature process technologies and their application to process integration for high-performance polycrystalline Si thin-film transistor fabrication. （Invited talks：Electrochemical Society 2000, 2001 MRS Spring Meeting, other 2 meetings） Industrial and Nation-wide Cooperation Seiko Epson Corp. (from f.y. 2003) Important Publications 1. S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue and T. Shimoda: ﾒHigh-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistorﾓ Jpn. J. Appl. Phys., 41, pp. 3646-3650 (2002). 2.ﾊ S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue and T. Shimoda: ﾒDevelopment of High-Performance Polycrystalline Silicon Thin-Film Transistors (TFTs) Using Defect Control Process Technologiesﾓ IEEE Electron Device Lett., 23, pp. 407-409 (2002). 3. S. Higashi and T. Sameshima: ﾒPulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Filmsﾓ Jpn. J. Appl. Phys., 40, (2001) pp. 480-485. 4. S. Higashi, D. Abe, S. Inoue and T. Shimoda: ﾒLow Temperature Formation of Device Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Depositionﾓ Jpn. J. Appl. Phys., 40, (2001) pp. 4171-4175. 5. S. Higashi, N. Andoh, K. Kamisako and T. Sameshima: ﾒStress in Pulsed-Laser Crystallized Silicon Filmsﾓ Jpn. J. Appl. Phys., 40, (2001) pp. 731-735. 6. Y. Tsunoda, T. Sameshima and S. Higashi: ﾒImprovement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatmentﾓ Jpn. J. Appl. Phys., 39, (2000) pp.1656-1659. 7. S. Higashi, K. Ozaki, K. Sakamoto, Y. Kano and T. Sameshima: ﾒElectrical Properties of Pulsed Laser Crystallized Lightly Doped Polycrystalline Silicon Filmsﾓ Jpn. J. Appl. Phys., 38, (1999) L857-L860. Laboratory Page http://home.hiroshima-u.ac.jp/semicon/ Personal Page
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