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Profile COE Members top Name and Affiliation Kentaro Shibahara shibasxsys.hiroshima-u.ac.jp Associate Professor Research Center for Nano-devices and Systems Hiroshima University Education and Professional Background 1983, 1985 and 1988 B.E., M.E., and D.E. degrees from Kyoto University 1988-1993 Microelectronics Research Laboratories, NEC Corporation 1993-1995 ULSI Device Development Labratories, NEC Corporation 1995-1996 Associate Professor of Research Center for Integrated Systems, Hiroshima University 1996- Associate Professor of Research Center for Nanodevices and Systems, Hiroshima University Academic Societies JSAP, IEICE, IEEE, MRS World Class Research Results Ulta-shallow low resistive junction formation and its application to nano-scale MOSFETs Metal gate workfunction tuning technologies Pioneering Research Results Analysis of Vth fluctuation in ultra-thin oxide gate MOSFETs 10 nm junction formation utlizing KrF excimer laser annealing Industrial and Nation-wide Cooperation STARC (2001-) Komatsu (2001-2002) NEC Hiroshima (2002-2003) MIRAI Pj (2002-) Selete (2004-) Important Publications 1. K. Shibahara, “Ultra-Shallow Jucntion Formation with Antimony Implantation” (Invited Paper), IEICE Trans. Electron., Vol. E85-C, 97 (2002), pp. 1091-10,. 2.  D. Notsu, N. Ikechi, Y. Aoki, N. Kawakami and K. Shibahara , “Fabrication of 100 nm width Fine Active-Region Using LOCOS Isolation”, IEICE Trans. Electron., Vol. E85-C, (2002), pp. 1119-1123. 3. T. Amada, N. Maeda, and K. Shibahara , “Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control”, Mat. Res. Soc. Symp. Proc., vol. 716, (2002), pp.B7.5.1-B7.5.6. 4. M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Miyazaki and M. Hirose, “Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current”, IEEE Trans. Electron Devices, Vol. 48 No. 2, (2001), pp. 259-264. 5. K. Shibahara, K. Egusa and K. Kamesaki and H. Furumoto, “Improvement in Antimony-Doped Ultra Shallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO2/Si Interface”, Jpn. J. Appl. Phys. Vol. 39, (2000), pp. 2194-2197. Laboratory Page http://www.rcns.hiroshima-u.ac.jp/ Personal Page http://www.rcns.hiroshima-u.ac.jp/shiba/ go to top
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