EnglishSite MapcontactHome

 

COEワークショップ:第4回プログラム


イベント・催し トップ

広島大学半導体技術シンポジウム

COEセミナー

COE研究会


第4回広島国際ワークショップ
「テラビット情報ナノエレクトロニクス」
−超微細デバイス・プロセス技術−

日時:平成17年9月16日(金) 9:00-18:00
場所:広島大学東広島キャンパス 学士会館

後援:IEEE広島支部
   応用物理学会中国四国支部
   電子情報通信学会中国支部

ポスターPDF(165KB)

プログラム講演題目

9:00-9:10 開会の辞
9:10-9:30 牟田泰三学長挨拶 挨拶
9:30-9:50

COE成果報告 広島大学 岩田穆

9:50-10:30 招待講演 慶応大学 黒田忠広
「システムLSI: 挑戦と好機」
10:30-11:10 招待講演 エール大学 T. P. Ma
「将来のCMOS技術のためのHigh-kゲート絶縁膜」
11:10-11:50 招待講演 カリフォルニア大学LA校 J. C. S. Woo
「サブ20nm新規Siベーストランジスタ」
11:50-13:10 昼食
13:10-13:50 招待講演 IMEC S. Biesemans
「サブ45nm技術のためのスケーリング技術」
13:50-14:30 招待講演 ソウル大学 Y. J. Park
「ナノMOSFETとスケーリング問題のデバイスシミュレーション」
14:30-15:10 招待講演 STマイクロエレクトロニクス F. Boeuf
「45nmノードのための従来型バルクデバイスおよび バルク+アーキテクチャ技術」
15:10-15:20 休憩
15:20-16:00

招待講演 松下電器 丹羽正昭
「HfベースのPVD High-kゲートスタックの現状-プロセス改良による駆動電流の向上」

16:00-16:40 広島大学 角南英夫ほか4名
「COEにおけるデバイス・プロセス研究開発の現状」
16:40-18:00 一般発表(ポスター)
P- 1 A 3D Integration Architecture utilizing Wireless Interconnections for Implementing Hyper Brains
Atsushi Iwata, Mamoru Sasaki, Takeshi Yoshida, Seiji Kameda, Hiroshi Ando, Masahiro Ono,Kanya Sasaki, Daisuke Arizono, and Takamaro Kikkawa
P- 2 A 0.95mW/1.0Gbps Spiral-Inductor Based Wireless Chip-Interconnect with Asynchronous Communication Scheme
Mamoru Sasaki and Atsushi Iwata
P- 3 A brain-type vision system using a 3-dimensional integration with local and global wireless interconnections
Seiji Kameda, Nobuo Sasaki, Daisuke Arizono, Masaki Odahara, Mamoru Sasaki, Takamaro Kikkawa, and Atsushi Iwata
P- 4 Robust Face Recognition Methods under Illumination Variations toward Hardware Implementation on 3DCSS
H. Ando, N. Fuchigami, M. Sasaki, and A. Iwata
P- 5 A Layout Method of 20GHz Global Clock Distribution
Mitsuru Shiozaki, Atsushi Mori, Atsushi Iwata, and Mamoru Sasaki
P- 6 A Robust Modular Learning Model with Addition and Integration of Modules
Masahiro Ono, Mamoru Sasaki, and Atsushi Iwata
P- 7 A window-based stereoscopic system using a weighted average of costs aggregated with window size reduction
Kan'ya Sasaki, Seiji Kameda, and Atsushi Iwata
P- 8 A CMOS RF Front-End using Radiation Oscillator for Short-Range Wireless Communication
Toru Mukai, Atsushi Iwata, and Mamoru Sasaki
P- 9 A 1V Supply Low noise CMOS Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization
Yoshihiro Masui, Takeshi Yoshida, Takayuki Mashimo, Mamoru Sasaki, and Atsushi Iwata
P- 10 Systems with Recognition and Learning Capability Based on Associative Memory
Hans Juergen Mattausch and Tetsushi Koide
P- 11 Real-Time Multi-Object Tracking Based on Highly Parallel Image Segmentation and Pattern Matching
Tetsushi Koide, Hans Juergen Mattausch, Takashi Morimoto, Hidekazu Adachi, and Kosuke Yamaoka
P- 12 Associative Memory Based Hardware Design for an OCR System and Prototyping with FPGA
Ali Ahmadi, Md. Anwarul Abedin, Kazuhiro Kamimura, Yoshinori Shirakawa, Kazuhiro Takemura,Hans Juergen Mattausch, and Tetsushi Koide
P- 13 Fully-Parallel Associative Memory Architecture Realizing Minimum Euclidean Distance Search
Md. Anwarul Abedin, Kazuhiro Kamimura, Ali Ahmadi, Hans Juergen Mattausch, and Tetsushi Koide
P- 14 Image-Scan Video Segmentation Architecture Based on Embedded Memory Technology
Takashi Morimoto, Hidekazu Adachi, Kosuke Yamaoka, Tetsushi Koide, and Hans Juergen Mattausch
P- 15 CAM-Based Huffman Coding Architecture for Real-Time Applications
Takeshi Kumaki, Yasuto Kuroda, Tetsushi Koide, Hans Juergen Mattausch, Hideyuki Noda,Katsumi Dosaka, Kazutami Arimoto, and Kazunori Saito
P- 16 Unified Data/Instruction Cache with Distributed Crossbar, Hidden Precharge Pipeline and Dynamic CMOS Logic
Koh Johguchi, Zhaomin Zhu, Ken-ichi Aoyama, Yuya Mukuda, Hans Juergen Mattausch,Testushi Koide, and Tetsuo Hironaka
P- 17 Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode
G. Suzuki, K. Konno, D. Navarro, N. Sadachika Y. Mizukane, O. Matsushima, T. Ezaki,Mitiko Miura-Mattausch, and S. Yokoyama
P- 18 Shot Noise Modeling in MOSFETs under Sub-threshold Condition
Yoshioki Isobe, Dondee Navarro, Youichi Takeda, Kiyohito Hara, Tatsuya Ezaki, and Mitiko Miura-Mattausch
P- 19 P-19 Wireless interconnects for UWB signal transmission in ULSIs Interconnection
T. Kikkawa, N. Sasaki, P. K. Saha, K. Kimoto, and M. Nitta
P- 20 The Development of UWB Gaussian Monocycle Pulse Synchronization Circuit based on 0.18μm CMOS Technology
Nobuo Sasaki, Pran Kanai Saha, and Takamaro Kikkawa
P- 21 Effect of Supercritical Fluid Extraction Process on Self-assembled Porous Silica Films
Kouji Isari, Nobuyuki Kawakami, Yoshito Fukumoto, and Takamaro Kikkawa
P- 22 Impulse-based UWB transmitter in 0.18 μm CMOS for wireless interconnect in future ULSI
P. K. Saha, N. Sasaki, and T. Kikkawa
P- 23 Data Transmission Characteristics of Integrated Linear Dipole Antennas for UWB Communication in Si ULSI
K. Kimoto, N. Sasaki, M. Nitta, and T. Kikkawa
P- 24 Interference of Digital Noise with Integrated Dipole Antenna for Inter-chip Signal Transmission In ULSI
M. Nitta and T. Kikkawa
P- 25 Front-End Technologies for nano-scale MOSFETs
Kentaro Shibahara
P- 26 Workfunction Tuning of Fully-Silicided NiSi Gate with Poly-Si Predoping
Takuji Hosoi, Kousuke Sano, Masaki Hino, Norihiro Ooishi, and Kentaro Shibahara
P- 27 Development of Three-Dimensional Beam-Channel MOS Transistors
Hideo Sunami, Kei Kobayashi, Shunpei Matsumura, Koji Yoshikawa, and Kiyoshi Okuyama
P- 28 Constraint of Source/Drain Formation with Plasma Doping Applied for Beam Channel Transistor on SOI
Kei Kobayashi, Kiyoshi Okuyama, Koji Yoshikawa, and Hideo Sunami
P- 29 Characterization of Newly Developed 3-D Parallel-Triple Gate MOS Transistor
Kiyoshi Okuyama, Koji Yoshikawa, and Hideo Sunami
P- 30 Control of Charged States of Silicon Quantum Dots and Their Application to Floating Gate MOS Memories and Light Emitting Diodes
Seiichi Miyazaki
P- 31 Impact of Rapid Thermal Annealing on ALCVD-Al2O3/Si3N4/Si(100) StackStructures --Photoelectron Spectroscopy
H. Murakami, F. Takeno, A. Ohta, S. Higashi , S. Miyazaki, K. Komeda, M. Horikawa, and K. Koyama
P- 32 Formation of Si Nano-crystals by Millisecond Annealing of SiOx Films using Thermal Plasma Jet
Seiichiro Higashi, Tatsuya Okada, Noto Fujii, Naohiro Koba, Hideki Murakami, and Seiichi Miyazaki
P- 33 Fabrication of Multiply-Stacked Structures Consisting of Si-QDs with Ultrathin SiO2 and Its Application of Light Emitting Diodes
Katsunori Makihara, Yoshihiro Kawaguchi, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki
P- 34 Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe
Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki
P- 35 Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack
Yanli Pei, Satoru Nagamachi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki,Takaaki Kawahara, Kazuyoshi Torii, and Yasuo Nara
P- 36 Characterization of Chemical Bonding Features of NH3-Annealed Hafnium Oxides Formed on Si(100)
H. Nakagawa, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki
P- 37 XPS Study of Ultrathin GeO2/Ge System
Akio Ohta, Hiroaki Furukawa, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki
P- 38 Phase Transformation of Amorphous Si Films in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
H. Kaku, S. Higashi, T. Okada, H. Murakami, and S. Miyazaki
P- 39 Characterization of Multi Step Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, and S. Miyazaki
P- 40 Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique
Junichiro Nishitani, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi,and Seiichi Miyazaki
P- 41 Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. Miyazaki
P- 42 Status of Research on Optical Interconnection in LSI
Shin Yokoyama
P- 43 Design and Simulation of Ring Resonator Optical Switches using Electro- and Magneto-Optic Materials
Yuichiro Tanushi and Shin Yokoyama
P- 44 Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Ba0.7Sr0.3TiO3Thin Films
Zhimou Xu, Masato Suzuki, Yuichiro Tanushi, Keita Wakushima, and Shin Yokoyama
P- 45 Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba,Sr)TiO3
Masato Suzuki, Zhimou Xu, Yuichiro Tanushi, and Shin Yokoyama
P- 46 Integration of High-Speed Photodetectors on Si LSI.124
Masayuki Kitaura, Yoshio Mizukane, Shin Yokoyama, and Mitiko Miura-Mattausch
P- 47 Development of Photodetectors using Si Quantum Dots
Mitsuhisa Ikeda, Masayuki Kitaura, Seiichi Miyazaki, and Shin Yokoyama
P- 48 Fabrication of Spin-Coat Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Lower Layer MOS Capacitors
Tetsuo Tabei, Kazuhiko Maeda, Shin Yokoyama, and Hideo Sunami
P- 49 Smooth Cu Thin Film Fabricated by H2 Addition Sputtering
Masahiro Ooka and Shin Yokoyama
P- 50 Characterization and application of SiON gate dielectrics
Anri Nakajima, Shiyang Zhu, Takuo Ohashi, and Hideharu Miyake
P- 51 Infuence of Bulk Bias on Negative Bias Temperature Instability of pMOSFETs with Ultrathin Plasma-Nitrided Gate Oxide
Shiyang Zhu, Anri Nakajima, Takuo Ohashi, and Hideharu Miyake
P- 52 [Invited] Dynamic Behavior of Human Eye
Roland Kempf, Yuichi Kurita, Yoshichika Iida, Makoto Kaneko, Hiromu Mishima,Hidetoshi Tsukamoto, and Eiichiro Sugimoto
18:00 バンケット
問合せ先
広島大学ナノデバイス・システム研究センター
COE事務員 白石絵美
Tel: 082-424-6969 / Fax: 082-424-6969
E-mail: shiraishi@sxsys.hiroshima-u.ac.jp
http://www.rcis.hiroshima-u.ac.jp/21coe/