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1996 (1996 April - 1997 March)

  1. Optical interconnection
  2. New architecture and circuit
  3. Advanced device process and material technologies for ULSI
  4. Light emitting devices

1 Optical interconnection

[96-1] J. Maeda, Y. Sasaki, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, "High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits", Jpn. J. Appl. Phys. Vol. 36 No. 3 (1997), pp. 1554-1557.

[96-2] J. Maeda, Y. Sasaki, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, "High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 643-645.

[96-3] A. Iwata, T. Doi, M. Nagata, S. Yokoyama and M. Hirose, "Photo-Electric Crossbar Switches for Multi-Processor Systems", Int. Conf. on Applications of Photonics Technology 1996 (ICAPT'96), pp. 105-107.

[96-4] S. Yokoyama, "Fabrication Technology for Optically Interconnected Integrated Circuit", FED Journal Vol. 7 Suppl. 2 (1996), pp. 17-27.

[96-5] 岩田 穆, "超大規模集積回路における光インタコネクション", 光学, Vol. 25 No. 3 (1996), pp.126-131.

[96-6] 岩田 穆, "光インタコネクションの集積回路への導入効果", OPTRONICS No. 9 (1996), pp.150-155.

[96-7] 横山 新, "光結合集積回路製作技術", FEDジャーナル Vol. 7 No.2 (1996), pp. 22-31.

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2 New architecture and circuit

[96-8] M. Nagata and A. Iwata, "A Minimum Distance Search Circuit using Dual-Line PWM Signal Processing and Charge Packet Counting Technique", Int. Solid-State Circuits Conf. 1997 (ISSCC'97), pp. 42-43.

[96-9] A.Iwata and M. Nagata, "A Concept of Analog-Digital merged Circuit Architecture for Future VLSI's", Analog Integrated Circuits and Signal Processing, Vol. 11 No.2 (1996), pp. 83-96.

[96-10] H. Araki, H. Fukumoto, T. Ae, "Image Processing using Simplified Kohonen Network", Real-Time Imaging(SPIE Proceedings), Vol. 2661 (1996), pp. 24-33.

[96-11] K. Nakamura, K. Sakai, T. Ae, "A VLIW Processor for Real-Time Signal Processing", Proc. Int. Symp. on Signal Processing and Its Applications (ISSPA'96), pp. 664-667.

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3 Advanced device process and material technologies for ULSI
3.1 Ultra small MOSFETs
[96-12] K. Shibahara, M. Mifuji, K. Kawabata, T. Kugimiya, H. Furumoto, M. Tsuno, S. Yokoyama, M. Nagata, S. Miyazaki and M. Hirose, "Low Resistive Ultra Shallow Junction for Sub 0.1ｵm MOSFETs Formed by Sb Implantation", Tech. Digest Int. Electron Devices Meeting (IEDM'96) pp. 579-582.
3.2 Evaluation, passivation and contamination of Si surface
[96-13] H. Sakaue, E. Takahashi, T. Tanaka, S. Shingubara and T. Takahagi, "Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH4F-Treated Si(111) Surface", Jpn. J. Appl. Phys., Vol. 36 No. 3B (1997), pp. 1420-1423.

[96-14] L. Ley, J. Ristein, J. Schafer and S. Miyazaki, "Near-Surface Dopant Passivation after Wet-Chemical Preparation of Si(111):H Surfaces", J. Vac. Sci. Technol. Vol. B14 (1996), pp. 3008-3012.

[96-15] T. Takahagi, S. Shingubara, H. Sakaue, K. Hoshino and H. Yashima, "Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry", Jpn. J. Appl. Phys., Vol. 35 No .7A (1996), pp. L818-L821.

[96-16] S. Miyazaki, J. Schafer, J. Ristein and L. Ley, "Implication of Hydrogen-Induced Boron Passivation in Wet-Chemically Cleaned Si(111):H", Appl. Surf. Sci. Vol. 117/118 (1997), pp. 32-36, 2nd Int. Symp. on Control of Semiconductor Interfaces (1996).

[96-17] H. Sakaue, E. Takahashi, T. Tanaka, A. Kojima, M. Osada, S. Shingubara and T. Takahagi, "Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH4F-Treated Si(111) Surface", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 392-394.

3.3 Ultra-thin gate oxide and SiO2/Si interface
[96-18] J. L. Alay and M. Hirose, "The Valence Band Alignment at Ultrathin SiO2/Si Interfaces", J. Appl. Phys. Vol. 81 No. 3(1997), pp. 1606-1608.

[96-19] S. Miyazaki, H. Nishimura, M. Fukuda, L. Ley and J. Ristein, "Structure and Electronic States of Ultrathin SiO2 Thermally Grown on Si(100) and Si(111) Surfaces", Appl. Surf. Sci. Vol. 113/114 (1997), pp. 585-589, 8th Int. Conf. on Solid Films and Surfaces (1996).

[96-20] M. Hirose, "Electron Tunneling through Ultrathin SiO2", Materials Science and Engineering Vol. B41 (1996), pp. 35-38.

[96-21] M. Hirose, J. L. Alay, T. Yoshida and S. Miyazaki, "Electronic Density of States at the Ultrathin SiO2/Si Interfaces", Proc. 189th Electrochemical Society Meeting, Vol. 96-1 (1996), pp. 630-630 (Invited).

[96-22] M. Hirose and S. Miyazaki, "Strained Bonds at the SiO2/Si Interfaces and Integrity of Ultrathin Oxides", Proc. of the 2nd Int. Symp. on Advanced Science and Technology of Silicon Materials (1996) pp. 378-383 (Invited).

[96-23] J. L. Alay and M. Hirose, "Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 515-517.

[96-24] T. Yoshida, S. Miyazaki and M. Hirose, "Analytical Modeling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 539-541.

[96-25] T. Yoshida, D. Imafuku, S. Miyazaki and M.Hirose, "Influence of Organic Molecule Contamination on Quasi-Breakdown of Ultrathin Gate Oxides", Proc. of the 3rd Int. Symp. on Ultra Clean Processing of Silicon Surfaces (1996), pp.305-308.

3.4 Atomic scale process
[96-26] S. Yokoyama, H. Goto, T. Miyamoto, N. Ikeda and K. Shibahara, "Atomic Layer Controlled Deposition of Silicon Nitride and In Situ Growth Observation by Infrared Reflection Absorption Spectroscopy", Appl. Surface Science Vol. 112 (1997), pp. 75-81, Abst. 1996 Int. Symp. on Atomic Layer Epitaxy and Related Surface Processes, (1996) Mo. 17:10.

[96-27] H. Goto, K. Shibahara and S. Yokoyama, "Atomic Layer Controlled Deposition of Silicon Nitride with Self-limiting Mechanism", Appl. Phys. Lett. Vol. 68 No. 23 (1996), pp. 3257-3259.

3.5 Plasma etching
[96-28] H. Sakaue, A. Kojima, N. Osada, S. Shingubara and T. Takahashi, "Highly Selective SiO2 Etching Using CF4/C2H4", Proc. Symp. on Dry Process (1996), pp. 141-146.
3.6 Metallization and related phenomena
[96-29] T. Ichiki, T. Kikuchi, A. Sano, S. Shingubara and Y. Horiike, "Gap-filling of Cu Employing Sustained Self-sputtering with Inductively Coupled Plasma Ionization", Jpn. J. Appl. Phys. Vol. 36 (1997), pp. 1469-1472.

[96-30] Z. J. Radzimski, O. E. Hankins, J. J. Cuomo, W. P. Posadowski and S. Shingubara, "Optical Emission Spectroscopy of High Density Metal Plasma Formed during Magnetron Sputtering", J. Vac. Sci. Technol. B Vol. 15 No. 2 (1997), pp. 202-208.

[96-31] M. Furukawa, Y. Yamamoto, H. Ikakura, N. Tanaka, M. Hashimoto, A. Sano and S. Shingubara, "Surface Morphologies of Sputter-deposited Aluminum Films Studied Using a High Resolution Phase Measuring Laser Interferometric Microscope", J. of Appl.Optics Vol. 35 No. 4 (1996), pp. 701-707.

[96-32] S. Shingubara K. Fujiki, H. Sakaue and T. Takahagi, "Resistance oscillation Induced by DC Electromigration", Stress-Induced Phenomena in Metallization - 3rd Int. Workshop AIP Conference Proceedings Vol. 373 (1996), pp. 248-262.

[96-33] S. Shingubara, Takata, H. Sakaue, and T. Takahagi, "Initial Stage of Titanium Silicide Formation on Si(111) Substrate", Mat. Res. Soc. Symp. Proc. Vol. 402 (1996), pp. 137-142.

[96-34] A. Sano, H. Kotani, H. Sakaue, S. Shingubara, T. Takahagi, Y. Horiike and Z. J. Radzimski, "Self-sputtering of Cu Film Employing Highly Ionized Cu Plasma", Advanced Metallization and Interconnect systems for ULSI Applications in 1995 Mat. Res. Soc. Conf. Proc. ULSI-XI (1996), pp. 709-715.

[96-35] S. Shingubara, A. Sano, H. Sakaue, T. Takahagi, Y. Horiike, Z. Radzimski and Posadowski, "Cu Deposition Characteristics into Submicron Contact Holes Employing Self-sputterigng with a High Ionization Rate", Mat. Res. Soc. Proc.Vol. 427 (1996), pp. 185-192.

[96-36] S. Shingubara, S. Takata, S. Shinabe, E. Takahashi, T. Tanaka, H. Sakaue and T. Takahagi, "In-situ Observation of Silicide Formation on Hydrogen-terminated Si Surface by UHV-STM and LEED", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 383-385.

[96-37] T. Ichiki, T. Kikuchi, A. Sano, S. Shingubara and Y. Horiike, "Gap-filling of Cu Employing Self-sustained Sputtering with ICP Ionization", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 115-1173.

3.7 Contamination control
[96-38] H. Tobimatsu, Y. Inoue, T. Seto, K. Okuyama, T. Fujii, H. Suzuki, K.Shibahara, S. Yokoyama and M. Hirose, "Reduction of Gaseous Contamination by UV/Photoelectron Method", Proc. Int. Symp. on Semiconductor Manufacturing (ISSM'96), pp. 192-195.

[96-39] 藤井 敏昭、奥山 喜久夫、横山 新、廣瀬 全孝, "UV/光電子を用いた減圧下での微粒子除去", 空気清浄、第34巻第1号 (1996.5) pp. 11-16.

3.8 Fine pattern formation
[96-40] K. Okamoto, S. Yamakawa, S. Miyazaki and M. Hirose, "Fine SiO2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask", Jpn. J. Appl. Phys. Part 2 Vol. 35 No. 4B (1996), pp. L519-L522.
3.9 Self assembling technique and quantum structure
[96-41] K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose, "Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition", Mat. Res. Soc. Symp. Proc. Vol. 452 (1997), pp. 243-248.

[96-42] K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose, "Self-Assembling of Si quantum Dots and Its Electronic Characterization", Chemistry and Physics of Small-Scale Structures, Winter Topical Meetings (1997), pp. 21-23.

[96-43] K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, "Phonon-Assisted Luminescence Excitation in Porous Silicon", J. Non-Cryst. Solid Vol. 198-200 (1996), pp. 953-956.

[96-44] K. Murayama, H. Komatsu, S .Miyazaki and M. Hirose, "Luminescence Excitation Assisted by Phonons in Porous Silicon", J. Luminescence Vol. 66&67 (1996), pp319-322.

[96-45] T. Takahagi, Y. Nagasawa and A. Ishitani, "Formation of Self-Assembled Organic Ultrathin Film by Chemisorption on Silicon Crystal Surface", Jpn. J. Appl. Phys.Vol. 35 No. 6A (1996), pp. 3542-3546.

[96-46] M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose, "Resonant Tunneling through SiO2/Si Quantum Dot/SiO2 Double Barrier Structures", Extend. Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), pp. 175-177.

3.10 Si based luminescent materials
[96-47] S. Miyazaki, A. Mouraguchi, K. Shiba, "Fabrication of Silicon Nanocrystallites by Oxidation / Annealing of Polysilane Films and Their Luminescence Properties", Thin Solid Films Vol. 297 (1997), pp. 183-187, 1996 Spring Conf. of European Material Research Society (1996).

[96-48] S. Miyazaki, A. Mouraguchi and M. Shinohara, "Stable Visible Photoluminescence from Annealed Polysiloxene-Based Thin Films", Mat. Res. Soc. Symp. Proc. Vol. 417 (1996), pp. 401-406.

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4 Light emitting devices

[96-49] T. Nishikawa, M. Yokota, S. Nakamura, Y.Kadoya, M. Yamanishi and I. Ogura, "Influence of Photon Reabsorption on the Transfer Efficiency of Output Intensity in Semiconductor Microcavities", IEEE Photonics Technology Lett.Vol. 9 No.2 (1997), pp. 179-181.

[96-50] M. Yamanishi, "Electron- and Photon-Manipulation in Microcavities and Practical Applications", 9th Int. Conf. Superlattices, Microstructures and Microdevices (1996) Program No. WeB-1, Superlattices and Microstructures, Vol. 22, No.1 (1997), pp. 97-107 (Invited).

[96-51] M. Yamanishi, Y. Kadoya, M. Kuwata-Gonokami and R. Shimano, "Cavity-Polariton and Ultrafast Optical Nonlinearity in DC-Biased AlGaAs Microcavities", Int. Symp. Quantum Structures for Photonic Applications (1997), pp. 54-54 (Invited).

[96-52] M. Yamanishi, K. Watanabe, N. Jikutani and M. Ueda, "Sub-Poissonian Photon-State Generation by Stark-Effect Blockade of Emission in a Semiconductor Diode", Phys. Rev. Lett. Vol. 76 (1996), pp.3432-3435.

[96-53] M. Yamanishi, "Sub-Poissonian Photon-States Generated by Light Emitting Diodes: Present Status of Experiments and a New Scheme for Emission Control", Proc. 6th NEC Symp. Fundamental Approaches to New Material Phases: Quantum Optical Phenomena in Spatially Confined Materials (1996) (Invited).

[96-54] T. Ishihara, T. Kuitani, Y. Sato, T. Fujita and M. Yamanishi, T. Ishihara,T. Kuitani, Y. Sato, T. Fujita and M. Yamanishi, "Cavity Polaritons in Quantum Wells with Distributed Feedback Structure", Proc. Int. Conf. on the Physics of Semiconductors (1996), pp. 3087-3090.

[96-55] M. Yamanishi, K. Watanabe, T. Yamashita and M. Ueda, "Quantum-Noise Correlation between Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions in Series-Connected Semiconductor Diodes", XX Int. Quantum Electronics Conf. (IQEC'96), program No. TuL34.

[96-56] Y. Kadoya, K. Kameda, T. Kannari and M. Yamanishi, "Effect of the Exciton Broadening on the polariton Mode Splitting in Semiconductor microcavities", XX Int. Quantum Electronics Conf. (IQEC'96 ), Program No. FO6.

[96-57] M. Kobayashi, H. Sumitomo, Y. Kadoya, M. Yamanishi and M. Ueda, "Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions",Session Sa.2(B), 3rd Int. Conf. Quantum Communication and Measurement (1996) (to be published in Proc.)

[96-58] M. Yamanishi, K. Watanabe, H. Sumitomo, T. Yamashita and M. Ueda,"Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions in Semiconductor Diodes driven by Constant Voltage Sources", Quantum Optics Meeting (1996).

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