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1999 (1999 April - 2000 March)

  1. Advanced device process and material technologies for ULSI
  2. Self assembling technique and quantum structure
  3. Light emitting devices
  4. Technologies for intelligent systems

1 Advanced device process and material technologies for ULSI
1.1 Fabrication and evaluation techniques for scaled MOS devices
[99-1] M. Koh, K. Egusa, H. Furumoto, T. Shirakata, E. Seo, K. Shibahara, S. Yokoyama, and M. Hirose, "Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation", Jpn. J. Appl. Phys. Vol. 38 (1999), pp. 2324-2328.

[99-2] K. Shibahara, K. Egusa, and K. Kamesaki, "Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si Interface", Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM'99), pp. 514-515.

[99-3] K. Egusa and K. Shibahara, "Influence of High Dose Low Energy Ion Implantation on Dopant Depth Profile", Proc. of Int. Conf. on Ion Implantation Tech. (IIT'98), pp. 724-727.

[99-4] Y. Aoki, K. Shibahara, S. Yokoyama, and N. Kawakami, "Evaluation of Stress Induced Defects due to Recessed LOCOS Process", J. Korean Phys. Soc. Vol. 35. Suppl. (1999), pp. S76-S79.

[99-5] M. Tsuno, M. Suga, M. Tanaka, K. Shibahara, M. Miura-Mattausch, and M. Hirose, "Physically-Based Threshold Voltage Determination for MOSFET's of All Gate Lengths", IEEE Trans. Electron Device Vol. 46 (1999), pp. 1429-1434.

[99-6] M. Tanaka, T. Okagaki, and M. Miura-Mattausch, "Influence of laser intensity on carrier generation in MOSFETs", Physica B, Vol. 272 (1999), pp. 554-557.

[99-7] W. Hansch, K. Anil, P. Bieringer, C. Fink, F. Kaesen, I. Eisele, M. Tanaka, and M. Miura-Mattausch, "Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs", Proc. of ESSDERC'99, (1999), pp. 408-412.

[99-8] M. Tanaka, N. Tokida, T. Okagaki, M. Miura-Mattausch, W. Hansch, and H. J. Mattausch, "High Performance of Short-Channel MOSFETs Due to an Elevated Central-Channel Doping", Proc. Int. ASP-DAC (2000), pp. 365-370.

[99-9] T. Ono, M. Miura-Mattausch, H. Baumgaertner, and H. J. Mattausch, "Deep Neutral Oxide Traps Near Midgap at Corners of Nonplaner MOS-Capacitors", Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM'99), pp. 532-533.

1.2 Gate oxide and reliability issues
[99-10] M. Hirose, M. Koh, W. Mizubayashi, H. Murakami, and K. Shibahara, "Fundamental Limit of Gate Oxide Thickness Scaling in Advanced MOSFETs", Semiconductor Science and Technology Vol. 15 (2000), pp. 485-490.

[99-11] W. Mizubayashi, H. Itokawa, S. Miyazaki, and M. Hirose, "Modeling of Soft Breakdown in Ultrathin Gate Oxides", Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM'99) pp. 318-319.

[99-12] Khairurrijal, S. Miyazaki, and M. Hirose, "Electron Field Emission from a Silicon Subsurface Based on a Generalized Airy Function Approach", J. Vac. Sci. & Technol. B Vol.17 (1999), pp. 306-310.

[99-13] Khairurrijal, S. Miyazaki, and M. Hirose, "Calculation of Subband States in a Metal-Oxide-Semiconductor", Jpn. J. Appl. Phys. Vol. 38 (1999), pp. 1352-1355.

[99-14] S. Miyazaki, T. Maruyama, A. Kohno, and M. Hirose, "Electronic Defect States at Ultrathin SiO2/Si Interfaces from Photoelectron Yield Spectroscopy", Material Science in Semiconductor Processing Vol. 2 (1999), pp. 185-190.

[99-15] S. Miyazaki, T. Maruyama, A. Kohno, and M. Hirose, "Photoelectron Yield Spectroscopy of Electronic States at Ultrathin SiO2/Si interfaces", Insulating Films on Semiconductors (1999).

[99-16] S. Miyazaki, T. Tamura, M. Ogasawara, H. Itokawa, H. Murakami, and M. Hirose, "Influence of Nitrogen Incorporation in Ultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface", Appl. Surf. Sci. Vol. 159 (2000), pp. 75-82.

1.3 Metallization and related phenomena
[99-17] 吉川公麿、"ULSIの微細化と多層配線技術への課題", 応用物理, 第68巻 (1999), pp. 1215-1225.

[99-18] T. Kikkawa, "Advanced Interconnect Technologies for ULSI Scaling", Proc. of Int. Conf. on VLSI and CAD, (1999), pp. 202-207.

[99-19] S. Mukaigawa, T. Aoki, Y. Shimizu, and T. Kikkawa, "Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films", Extend. Abst. of the Int. Conf. on Solid-State Devices and Materials (SSDM'99), pp. 504-505.

[99-20] T. Aoki, Y. Shimizu, and T. Kikkawa, "Porous Silicon Oxynitride Films Derived from Polysilazane as a Novel Low-Dielectric Constant Material", Mat. Res. Soc. Symp. Proc. Vol. 565 (1999), pp. 41-46.

[99-21] T. Kikkawa, "ULSI Scaling and Interconnect Technology", Proc. of the Advanced Metallization Conference (1999), pp. 705-715.

[99-22] S. Abdeslam and S. Shingubara, "Molecular Dynamics Simulation of a Triple Point of Grain Boundaries", Advanced Metallization Conf., Mat. Res. Soc. Symp. Proc. ULSI-XIV (1999), pp. 475-482.

[99-23] S. Shingubara, H. Kotani, H. Sakaue, F. Nishiyama, and T. Takahagi, "Correlation between Agglomeration of a Thin Film and Reflow Filling in a Contact Hole for Sputtered Al Films", J. of Vac. Sci. and Technol. B, Vol. 17 (1999), pp. 2553-2558.

[99-24] S. Shingubara, Y. Takeda, H. Sakaue, and T. Takahagi, "Electromiogration Reliability Study of a GMR Spin Valve Devices", Mat. Res. Soc. Symp. Proc. Vol. 563 (1999), pp.145-150.

[99-25] S. Shingubara, T. Osaka, H. Sakaue, T. Takahagi, and A. H. Verbruggen, "Multiprobe Resistance Change Monitoring of Blech Pattern during Electromigration Testing", Fifth Int. Workshop on Stress-Induced Phenomena in Metallization, American Institute of Physics Proc. (1999), pp.138-149.

1.4 CVD and Si epitaxial technologies
[99-26] T. Fujimoto, K. Okuyama, S. Yamada, and M. Adachi, "Effect of Cluster/Particle Deposition on Atmospheric Pressure Chemical Vapor Deposition of SiO2 from Four Gaseous Organic Si-Containing Precursors and Ozone", J. Appl. Phys. Vol. 85 (1999), pp. 4196-4206.

[99-27] H. Habuka, T. Otsuka, M. Mayusumi, M. Shimada, and K. Okuyama, "A Direct Approach for Evaluating the Thermal Condition of a Silicon Substrate under Infrared Rays and Specular Reflectors", J. Electrochem. Soc. Vol. 146 (1999), pp. 713-718.

[99-28] 足立元明, 藤本敏行, 中曽浩一, 金泰吾, 奥山喜久夫,「ソースガスのイオン化によるCVD成膜装置内における粒子発生の制御」, 化学工学論文集 第25巻 (1999), pp. 878-883.

[99-29] H. Habuka, Y. Aoyama, S. Akiyama, T. Otsuka, W.-F. Qu, M. Shimada, and K. Okuyama, "Chemical Process of Silicon Epitaxial Growth in a SiHCl3-H2 System", J. Crystal Growth Vol. 207 (1999), pp. 77-86.

[99-30] M. Adachi, T. Fujimoto, K. Nakaso, K. Okuyama, F. G. Shi, H. Sato, T. Ando, and H. Tomioka, "Film Formation by Motion Control of Ionized Precursors in Electric Field", Appl. Phys. Lett. Vol. 75 (1999), pp. 1973-1975.

1.5 Atomic scale process
[99-31] W. Hansch, A. Nakajima, and S. Yokoyama, "Characterization of Silicon/Oxide/Nitride Layers by X-ray Photoelectron Spectroscopy", Appl. Phys. Lett. Vol. 75 (1999), pp. 1535-1537.

[99-32] S. Yokoyama, Y. Nakashima, and K. Ooba, "Atomic-Layer Deposition of Silicon Nitride", J. Korean Phys. Soc. Vol. 35 (1999), pp. S71-S75.

1.6 High-k dielectrics
[99-33] H. Itokawa, T. Maruyama, S. Miyazaki, and M. Hirose, "Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy", Extend. Abst. of the Inter. Conf. on Solid State Devices and Materials (SSDM'99), pp. 158-159.
1.7 Contamination control
[99-34] S. Yokoyama, Y. Hara, T. Yoshino, T. Suzuki, T. Fujii, and K. Ohyama, "Evaluation of 300 mm Wafer Boxes with UV/Photoelectron Cleaning Capability", Proc. Int. Symp. on Semiconductor Manufacturing (1999), pp. 169-172.

[99-35] M. Shimada, K. Okuyama, Y. Inoue, M. Adachi, and T. Fujii, "Removal of Airborne Particles by a Device Using UV/Photoelectron Method under Reduced Pressure Conditions", J. Aerosol Sci. Vol. 30 (1999), pp. 341-353.

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2 Self assembling technique and quantum structure
2.1 Si quantum dot
[99-36] S. Miyazaki, K. Shiba, N. Miyoshi, K. Etoh, A. Kohno, and M. Hirose, "Luminescence Study of Self-Assembled, Silicon Quantum Dots", Mat. Res. Soc. Symp. Proc. Vol. 536 (1999), pp. 45-50.

[99-37] S. Miyazaki , H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, and M. Hirose, "Self-Assembling of Silicon Quantum Dots and Its Application to Floating Gate Memory", the 1999 Int. Microprocesses and Nanotechnology Conf. (1999), pp. 84-85.

[99-38] S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda, and M. Hirose, "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition", Int. Joint Conf. on Silicon Epitaxy and Heterostructures (1999), p.B-4.

[99-39] S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda, and M. Hirose, "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition", Thin Solid Films Vol. 369 (2000), pp. 55-59.

[99-40] S. Miyazaki, Y. Yoshida, Y. Hamamoto, and M. Hirose, "Nucleation Site Control in Self-Assembling of Silicon Quantum Dots on Ultrathin SiO2/c-Si", Abst. of Int. Symp. on Surface Science for Micro- and Nano-Device Fabrication (1999), p. Tu-2-C-3.

[99-41] N. Shimizu, M. Ikeda, E. Yoshida, S. Miyazaki, and M. Hirose, "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique", Extend. Abstr. of the Int. Conf. on Solid State Devices and Materials (SSDM'99), pp. 80-81.

[99-42] N. Shimizu, M. Ikeda, E. Yoshida, S. Miyazaki, and M. Hirose, "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique", Jpn. J. Appl. Phys. Vol. 39 (2000), pp. 2318-2320.

2.2 Al nanoscale structure
[99-43] S. Shingubara, O. Okino, Y. Sayama, H. Sakaue, and T. Takahagi, "Two Dimensional Nanowire Formation on Si Substrate Using Self-organized Nanoholes of Anodically Oxidized Akuminum" , Solid State Electronics Vol. 43 (1999), pp.1143-1146.

[99-44] S. Shingubara, O. Okino, K. Nakaso, H. Sakaue, and T. Takahagi, "Fabrication of Nano Holes Array on Si Substrate using Anodically Oxidized Aluminum Etching Mask", Digest Papers of Microprocess and Nanotechnology `99 (1999), pp. 124-125.

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3 Light emitting devices

[99-45] Y. Hokomoto, Y. Kadoya, and M. Yamanishi, "THz Electromagnetic Wave Radiation from Coherent Oscillation of Exciton Population in High-Q Semiconductor Microcavities", Appl. Phys. Lett. Vol. 74 (1999), pp. 3839-3841.

[99-46] M. Kobayashi, M. Yamanishi, H. Sumitomo, and Y. Kadoya, "Influence of the Backward-Pump Process on Photon-Number Squeezing in a Constant-Current-Driven Heterojunction LED: Transition from Thermionic Emission to Diffusion Limits", Phys. Rev. B Vol. 60 (1999), pp. 16686-16700.

[99-47] M. Kusuda, S. Tokai, Y. Hokomoto, Y. Kadoya, and M. Yamanishi, "THz Electromagnetic Wave Radiation from Semiconductor Microcavities in Nonperturbative Regime", 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) (1999), p. ThA-1.

[99-48] M. Kusuda, S. Tokai, Y. Hokomoto, Y. Kadoya, and M. Yamanishi, "THz Electromagnetic Wave Radiation from Semiconductor Microcavities in Nonperturbative Regime", Physica B Vol. 272 (1999), pp. 467-471.

[99-49] 山西正道，平野琢也，角屋 豊，"サブポアソン光-光子数揺らぎへの挑戦", 日本物理学会誌 Vol. 55 (2000), pp.180-188.

[99-50] T. Fujita and T. Ishihara, "Directionally Enhanced Photoluminescence from Distributed Feedback Cavity Polaritons", J. Phys. Soc. Jpn. Vol. 68 (1999), pp. 2918-2921.

[99-51] T. Fujita, H. Nakashima, M. Hirasawa, and T. Ishihara, "Ultrafast Photoluminescence from (C6H5C2H4NH3)2PbI4", J. Luminescence Vol. 87-89 (2000), pp. 847-849.

[99-52] T. Fujita, T. Kitabayashi, A. Seki, M. Hirasawa, and T. Ishihara, "Optical Properties of Asymmetric Photonic Crystals", Physica E Vol. 7 (2000), pp. 681-685.

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4 Technologies for intelligent systems

[99-53] H. J. Mattausch, Y. Tatsumi, K. Kishi, T. Gyoten, and K. Yamada, "Aera-Efficient Multiport Memories for the Tb/s Bandwidth Era", 25th European Solid-State Circuits Conf. (ESSCIRCﾕ99) (1999), pp. 126-129.

[99-54] M. Suetake, M. Miura-Mattausch, H. J. Mattausch, S. Kumashiro, N. Shigio, S. Odanaka, and N. Nakayama, "Precise Physical Modeling of the Reverse-Short-Channel Effect for Circuit Simulation", Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPADﾕ99) (1999), pp. 207-210.

[99-55] H. J. Mattausch, "Hierarchical Architecture for Area-Efficient Integrated N-port Memories with Latency-Free Multi-Gb/s Access Bandwidth", Electronics Letters Vol. 35 (1999), pp.1441-1443.

[99-56] Y. Tatsumi and H. J. Mattausch, "Fast Quadratic Increase of Multiport-Storage-Cell Area with Port Number", Electronics Letters Vol. 35 (1999), pp. 2185-2187.

[99-57] A. Iwata, N. Sakimura, M. Nagata, and T. Morie, "The Architecture of Delta Sigma Analog-to-Digital Converter using Voltage-Controlled Oscillator as a Multibit Quantizer", IEEE Trans. Circuits and Systems-II Vol. 46 (1999), pp. 941-945.

[99-58] S. Kinoshita, T. Morie, M. Nagata, and A. Iwata, "New Non-Volatile Analog Memory Circuits Using PWM Methods", IEICE Trans. Electron. Vol. E82-C (1999), pp. 1655-1661.

[99-59] T. Morie, S. Sakabayashi, M. Nagata, and A. Iwata, "Nonlinear Dynamical Systems Utilizing Pulse Modulation Signals and a CMOS Chip Generating Arbitrary Chaos", Proc. 7th Int. Conf. on Microelectronics for Neural, Fuzzy and Bio-inspired Systems (MicroNeuro'99), pp. 254-260.

[99-60] M. Nagata, M. Homma, N. Takeda, T. Morie, and A. Iwata, "A Smart CMOS Imager with Pixel Level PWM Signal Processing", Symposium on VLSI Circuits Dig. of Technical Papers, (1999), pp. 141-144.

[99-61] H. Ando, M. Miyake, T. Morie, M. Nagata, and A. Iwata, "A Nonlinear Oscillator Network Circuit for Image Segmentation with Double-threshold Phase Detection", Proc. 9th Int. Conf. on Artificial Neural Networks (ICANN'99), pp. 655-660.

[99-62] H. Nakamoto, M. Nagata, T. Morie, and A. Iwata, "A Pattern Matching Processor Using Analog-Digital Merged Architecture Based on Pulse Width Modulation", Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM'99), pp. 98-99.

[99-63] T. Yamanaka, T. Morie, M. Nagata, and A. Iwata, "A Stochastic Association Circuit Using PWM Chaotic Signals", Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM'99), pp. 100-101.

[99-64] A. Iwata, M. Nagata, H. Nakamoto, N. Takeda, M. Homma, H. Higashi, and T. Morie, "A Feature Associative Processor for Image Recognition based on A-D merged Architecture", VLSI: system on a chip: IFIP Int. Conf. on VLSI (1999), pp. 77-88.

[99-65] T. Morie, T. Matsuura, S. Miyata, T. Yamanaka, M. Nagata, and A. Iwata, "Quantum Dot Structures Measuring Hamming Distance for Associative Memories", Surfaces and Interfaces of Mesoscopic Devices (SIMD'99).

[99-66] H. Ando, M. Miyake, T. Morie, M. Nagata, and A. Iwata, "A Nonlinear Oscillator Network for Gray-level Image Segmentation and PWM/PPM Circuits for its VLSI Implementation", IEICE Trans. Fundamentals Vol. E83-A (2000), pp. 329-336.

[99-67] N. Takeda, M. Homma, M. Nagata, T. Morie, and A. Iwata, "A Smart Imager for the Vision Processing Front-end", Asia and South Pacific Design Automation Conf. (ASP-DAC2000) A1.10, (2000), pp. 19-20.

[99-68] K. Murakoshi, T. Morie, M. Nagata, and A. Iwata, "An Arbitrary Chaos Generator Core Circuit Using PWM/PPM Signals", Asia and South Pacific Design Automation Conference (ASP-DAC2000) A1.12 (2000), pp. 23-24.

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