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Awards

Newspaper Articles

2006 AWARDS

2006 IEEE Nishi-zawa Medal Winner

Prof. Hideo Sunami (Hiroshima University), Prof. Mitsumasa Koyanagi (Tohoku University), and Otoco Ito(Hitachi Ltd.)

Prof. Sunami from Tohoku University and Prof. Mitsumasa Koyanagi and Otoco Ito both fellows in Hitachi Ltd. won the IEEE Nishi-zawa medal. The professors enabled the evolution of DRAM which is the most general random-access memory in today's personal computers and workstations, and performed three main inventions concerning the memory cell structure and architecture.

While the 4Kb DRAMs technology goes back to the industry standard of 1975, the main achievement of Prof. Sunami is invention of Trench Capacitor Cell. With its high aspect ratio trench , trench capacitor provides an improvement in dry etching, defective control, and inspection technology. This cell is widely used in general-purpose DRAM products and DRAM built-in LSI technology, today.

The IEEE fellow Prof. Sunami has already won the IEEE Cledo Brunetti Award, The Paul Rappaport Award of IEEE Electronic Device Society (EDS), and the Tokyo Outstanding Inventors Award.

2006 8th LSI IP Design Award for Development Encouragement

Kenichi Aoyama, Tetsushi Koide (assistant professor), Hans Jürgen Mattausch (professor)
Moto Maeda, Kazuya Tanigawa, Tetsuo Hironaka (assistant professor in Hiroshima city university)

Mr. Aoyama, Dr. Koide, and professor Mattausch won the prize of 8th LSI IP Design Award for Development Encouragement for "A Prototype of Super-Scalar Processor Using Multi-bank Register File”in 2006. The originality of the LSI design chip fabricated for Prototype of Super-Scalar Processor Using Multi-bank Register File was admitted and its effectiveness for future of LSI design research was evaluated as high.