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1997 (1997 April - 1998 March)

  1. Optical interconnection
  2. New architecture and circuit
  3. Advanced device process and material technologies for ULSI
  4. Light emitting devices

1 Optical interconnection

[97-1] Y. Sasaki, J. Maeda, T. Koishi, K. Hashimoto, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, "High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate", Abst. of the 192nd Electrochemical Society Meeting (1997), pp. 2469-2469.

[97-2] T. Doi, A. Iwata and M. Hirose, "Analysis and Design of Low Loss and Low Mode-Shift Integrated Optical Waveguides Using Finite-Difference Time-Domain Method", IEICE Trans. Electronics, Vol. E80-C, No.5 (1997) , pp. 625-631.

[97-3] A. Iwata, T. Doi, M. Nagata, S. Yokoyama and M. Hirose, "Photo-Electric Crossbar Switches for Multi-Processor Systems", Applications of Photonics Technology 2 (1997), pp. 505-510.

[97-4] T. Doi, A. Uehara, Y. Takahashi, S. Yokoyama, A. Iwata and M. Hirose," An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines", Jpn. J. Appl. Phys., Vol. 37, Part I, No. 3B (1998), pp.1116-1121.

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2 New architecture and circuit

[97-5] H.J. Mattausch, ﾒHierarchical N-Port Memory Architecture based on 1-Port Memory Cellsﾓ, Proc. of 23rd European Solid-State Circuits Conf. (1997), pp. 348-351.

[97-6] M. Nagata and A. Iwata, "A Macroscopic Substrate Noise Model for Full Chip Mixed-Signal Design Verification", 1997 Symposium on VLSI Circuits, pp. 37-38.

[97-7] T. Morie, S. Sakabayashi, M. Nagata and A. Iwata, "Nonlinear Function Generators and Chaotic Signal Generators Using a Pulse-Width Modulation Method", Electron. Lett., Vol. 33, No. 16 (1997), pp. 1351-1352.

[97-8] M. Saen, T. Morie M. Nagata and A. Iwata, "A Stochastic Associative Memory Using Single-Electron Tunneling Devices", IEICE Trans. Electronics, Vol. E81-C, No.1 (1998), pp. 30-35.

[97-9] M. Nagata, J. Funakoshi and A. Iwata ,"A PWM Signal Processing Core Circuit Based on a Switched Current Integration Technique", IEEE Journal of Solid-State Circuits, Vol. 33, No.1 (1998), pp. 53-59

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3 Advanced device process and material technologies for ULSI

 

 

3.1 Elemental technologies for MOS devices

[97-10] N. Kawakami, Y. Aoki, T. Kugimiya, K. Shibahara and S. Yokoyama, "Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process", Extend. Abst. 1997 Int. Conf. on Solid State Devices and Materials (SSDM'97), pp. 394-395.

[97-11] S. Miyazaki, A. Tohyama, H. Murakami, T. Tamura, M. Miura and M. Hirose, "Characterization of Ultrathin As-Implanted Layers on Si(100) by Photoelectron Spectroscopy", Abst.of the 4th Int. Symp. on Atomically Controlled Surfaces and Interfaces, (1997) pp. 329-331.

[97-12] M. Tsuno, M. Suga, M. Tanaka, K. Shibahara, M. Miura-Mattausch, and M. Hirose,"Reliable Threshold Voltage Determination for Sub-0.1um Gate Length MOSFETs," Proc. Asia and South Pacific Design Automation Conf. (1998), pp.111-116.

3.2 Evaluation and passivation of Si surface

[97-13] T. Osada, Y. Kawazawa, S. Miyazaki and M. Hirose, "Influence of BHF Treatments on Hydrogen-Terminated Si(100) Surfaces", Mat. Res. Soc. Proc. Vol. 477 (1997) pp. 197-202.

[97-14] S. Miyazaki, T. Tamura, T. Maruyama, A. Kohno and M. Hirose, "Electronic States of Hydrogen-Terminated Silicon Surfaces and SiO2/Si Interfaces", JRCAT Int. Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces (1997), pp. 35-36.

3.3 Ultra-thin gate oxide and related technologies

[97-15] H.J. Mattausch, M. Kerber, R. Allinger and H. Braun, ﾒLocalized Highly Stable Electrical Passivation of the Thermal Oxide on Nonplanar Polycrystalline Siliconﾓ, Appl. Phys. Lett. Vol. 71 (1997), pp. 3391-3393.

[97-16] M. Hirose, W. Mizubayashi, K. Morino, M. Fukuda and S. Miyazaki, "Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides", Proc. of NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Base Devices (1997) pp. 315-324 (Invited).

[97-17] D. Imafuku, W. Mizubayashi, S. Miyazaki, M. Hirose, Y. Wakayama and S. Kobayashi, "Organic Contamination of Silicon Wafers in Clean Room Air and Its Impact to Gate Oxide Integrity", Mat. Res. Soc. Symp. Proc. Vol. 477 (1997) pp. 101-105.

[97-18] K. Morino, S. Miyazaki and M. Hirose, "Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure", , Extend. Abst. 1997 Int. Conf. on Solid State Devices and Materials (SSDM'97), pp. 18-19.

[97-19] Khairurrijal, S. Miyazaki and M. Hirose, "Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces", Jpn. J. Appl. Phys. Vol. 36, Part 2, No. 11B (1997) pp. L1541-L1544.

3.4 Atomic scale process

[97-20] S. Yokoyama, N. Ikeda, K. Kajikawa and Y. Nakashima, "Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces",Proc. of the 4th Int. Symp. on Atomically Controlled Surfaces and Interfaces (1997), pp. 314-315.

3.5 Plasma etching

[97-21] H. Sakaue, A. Kojima, N. Osada, S. Shingubara and T. Takahagi, "Highly Selective SiO2 Etching Using CF4/V2H4", Jpn. J. Appl. Phys. Vol. 36, No. 4B (1997), pp. 2477-2481.

3.6 Metallization and related phenomena

[97-22] S. Shingubara, H. Kotani, K. Ando, H. Sakaue, F. Nishiyama and T. Takahagi,"Effect of Interace Reaction and Wetting Properties on Al Reflow Characteristics", Mat. Res. Soc. Symp. Proc. Vol. ULSI XII (1997), pp. 117-121.

[97-23] S. Shingubara, S. Kajiwara, T. Osaka, H. Sakaue and T. Takahagi, "Void Elongation Phenomena Observed in Polycrystalline Cu Interconnects at a High Current Density Stressing Conditions", Mat. Res. Soc. Symp. Proc. Vol. 473 (1997), pp. 229-234.

[97-24] 新宮原正三, "LSI配線信頼性技術における課題と今後の方向", REAJ誌, Vol. 19, No. 4 (1997) pp. 257-262.

[97-25] S. Shingubara, H. Kotani, H. Sakaue, F. Nishiyama and T. Takahagi, "Effect of Underlayer TiN Film Properties on Al Reflow Characteristics", Proc. of 4th Int. Workshop on Stress Induced Phenomena in Metallization (1998), pp. 413-418.

[97-26] S. Shingubara, T. Osaka, S. Abdeslam, H. Sakaue and T. Takahagi, "Void Formation Mechanism at No Current Stressed Area", Proc. of 4th Int.Workshop on Stress Induced Phenomena in Metallization (1998), pp. 159-170.

3.7 Contamination control

[97-27] H. Tobimatsu, W. Mizubayashi, T. Fujii, K. Shibahara, S. Yokoyama and M. Hirose, "Reliability Evaluation of Ultrathin Gate Oxides Grown on Si Wafers Stored in Clean Stocker with a UV/Photoelectron Source", Proc. of Int. Symp. on Semiconductor Manufacturing (ISSM'1997), pp. F5-F8.

[97-28] H. Tobimatsu, Y. Inoue, T. Seto, K. Okuyama, T. Fujii, H. Suzuki, K. Shibahara, S. Yokoyama and M. Hirose, "Reduction of Gaseous Contamination by UV/Photoelectron Method", IEEE Transactions on Semiconductor Manufacturing Vol. 11, No. 1 (1998), pp. 9-12.(1998).

[97-29] M. Shimada, S. J. Cho, K. Okuyama, T. Tamura, M. Adachi and T. Fujii, "Removal of Submicron Aerosol Particles by a Tubular Particle-Removal Device using UV/ Photoelectron Method", J. Aerosol Sci. Vol. 28 No. 4 (1997), pp.649-661.

3.8 Self assembling technique and quantum structure

[97-30] M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose, "Resonant Tunneling Thorough a Self-Assembled Si Quantum Dot", Appl. Phys. Lett. Vol. 70, No. 17 (1997), pp. 2291-2293.

[97-31] A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose, "Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors" , Extend. Abst. 1997 Int. Conf. on Solid State Devices and Materials (SSDM'97), pp. 566-567.

[97-32] A. Kohno, S. Miyazaki, H. Murakami, M. Ikeda and M. Hirose, "Electron Charging to a Silicon-Quantum-Dots Floating Gate in MOS Structures", Extended Abstracts of the 3rd Intern. Workshop on Quantum Functional Devices (1997), pp. 99-100 (Invited).

[97-33] K. Shiba, K. Nakagawa, M. Ikeda, A. Kohno, S. Miyazaki and M. Hirose, "Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots", Jpn. J. Appl. Phys. Vol. 36, Part 2, No. 10A (1997), pp. L1279-L1282.

[97-34] S. Shingubara, O. Okino, Y. Sayama, H. Sakaue and T. Takahagi, "Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum", Jpn. J. Appl. Phys. Vol. 36, No. 12B (1997), pp. 7791-7795.

[97-35] H. Sakaue, Y. Katsuda, S. Shingubara and T. Takahagi, "Al Nano-Structure Formation using Selective Reactivity of Step/Terrace Structure of Hydrogen-terminated Si(111) Surface", Proc. of 4th Int. Symp. on Atomically Controlled Surfaces and Interfaces (1997) p.345.

[97-36] H. Sakaue, T. Tanaka, S. Shingubara and T. Takahagi, "Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface", JRCAT Int. Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces (1997), pp. 11-12.

[97-37] M. Furukawa, S. Shingubara and Y. Horiike, "A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler for Specific Surfaces", Jpn. J. Appl. Phys. Vol. 36, No. 6A (1997), pp. 3750-3754.

3.9 Miscellaneous Si technologies

[97-38]. K. Okuyama, K., T. Fujimoto, M. Adachi, T. Hayashi, "Gas-Phase Nucleation in APCVD Thin Film Formation Process Using Tetraethylorthosilicate (TEOS)/O3 System", AIChE J. Vol. 43 No. 11A (1997), pp. 2688-2697.

[97-39] H. Habuka, M. Katayama, M. Shimada and K. Okuyama, "Nonlinear Increase in Silicon Epitaxial Growth Rate in SiHCl3-H2 System under Atmospheric Pressure", J. Cryst. Growth. Vol. 182 No. 3 (1997), pp. 352-362.

[97-40] 羽深 等、片山 正健、島田 学、奥山 喜久夫, "シリコンエピタキシャル成長におけるドーパントガスの輸送現象解析", 化学工学論文集、第23巻 第6号 (1997), pp. 772-779.

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4 Light emitting devices

[97-41] S. Yokoyama, N. Dietz, Y. Sasaki, J. Maeda and N. Sukidi, "Real-Time Study on Heteroepitaxial GaAs and GaP Growth Processes on Structured Si(100) Substrates", Proc. of 1996 Fall meeting of Mat. Rec. Soc. (1996), M8.2.

[97-42] N. Sukidi, N. Dietz, K.J. Bachmann, S. Shingubara and S. Yokoyama, "Heteroepitaxial Layer Overgrowth of GaP on Structured Silicon Surfaces", Abst. of the 191st Electrochemical Society Meeting (1997), Abst. No. 499.

[97-43] M. Yamanishi and Y. Kadoya, "Electron- and photon-manipulation in microcavities and practical applications", Superlattices and Microstructures, Vol. 22 No.1 (1997), pp.97-107.

[97-44] R. Shimano, S. Inouye, I. Ogura, Y. Kadoya, M. Yamanishi, M. Kuwata-Gonokami, "Nonlinear Optical Responses of Exciton-Microcavity Coupled System in Weak and Intermediate Coupling Regime", J. Luminescence Vol.72-74 (1997), pp. 297-299.

[97-45] M. Kobayashi, H. Sumitomo, Y. Kadoya, M. Yamanishi, and M. Ueda, "Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions", Quantum Communication, Computing and Measurement, ed. Hirota et al., Plenum Press, New York (1997) pp. 503-5512.

[97-46] M. Yamanishi and T. Hirano, "Sub-Poissonian Photon-States Generated by Light-Emitting-Diodes: Coulomb Blockade of Pump Events and Stark-Effect Blockade of Emission Events", Materials and Science & Engineering B Vol.48j (1997), pp. 26-33.

[97-47] M. Kobayashi, M. Kohno, Y. Kadoya, M. Yamanishi, J. Abe, and T. Hirano, "Wide-Band Suppression of Photon-Number Fluctuations in aHigh-Speed Light-Emitting Diode Driven by a Constant-Current Source", Appl. Phys. Lett. Vol.72 No.3 (1998), pp.284-286.

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