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1998 (1998 April - 1999 March)

  1. Advanced device process and material technologies for ULSI
  2. Self assembling technique and quantum structure
  3. Light emitting devices
  4. Technologies for intelligent systems

1 Advanced device process and material technologies for ULSI

 

 

1.1 Fabrication and evaluation techniques for scaled MOS devices

[98-1] K. Shibahara, H. Furumoto, K. Egusa, M. Koh and S. Yokoyama, "Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation" , Mat. Res. Soc. Symp. Proc. Vol. 532 (1998), pp. 23-28.

[98-2] K. Egusa and K. Shibahara, "Influence of High Dose Low Energy Ion Implantation on Dopant Depth Profile," Abst. of Int. Conf. on Ion Implantation Tech.(IIT'98), p. P1-145.

[98-3] M. Koh, K. Egusa, H. Furumoto, K. Shibahara, S. Yokoyama and M. Hirose, "Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation", Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM'98), pp. 18-19.

[98-4] M. Koh, K. Iwamoto, W. Mizubayashi, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Yokoyama, S. Miyazaki, M.Miura-Mattausch and M. Hirose, "Threshold Voltage Fluctuation Induced by Direct Tunnel Leakage Current through 1.2-2.8 nm Thick Gate Oxides for Scaled MOSFETs", Tech. Digest Int. Electron Devices Meeting (IEDM'98), pp. 919-922.

[98-5] M. Tsuno, S. Yokoyama, and K. Shibahara, "A Study of Electrical Characteristics Improvements in Sub-0.1 ｵm Gate Length MOSFETs by Low Temperature Operation", IEICE Trans. Electron. Vol. E81-C (1998), pp. 1913-1917.

[98-6] M.Tsuno, M. Tanaka, M. Koh, K. Iwamoto, H. Murakami, K. Shibahara and M.Miura-Mattausch, "Suppression of Reverse-short-channel Effect in Sub-0.1 ｵm n-MOSFETs with Sb S/D implantation", Electronics Lett. Vol. 35 (1999), pp. 508-509.

[98-7] Y. Aoki, N. Kawakami, K. Shibahara and S. Yokoyama, "Evaluation of Stress Induced Defects due to Recessed LOCOS Process", Abst. of IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98) (1998), p. 79.

[98-8] T. Hatano, A. Nomura, M. Yoshida, A. Nakajima, K. Shibahara and S. Yokoyama, "Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors", Jpn. J. Appl. Phys. Vol. 38 (1999), pp. 399-402.

1.2 Gate oxide and reliability issues

[98-9] M. Hirose, W. Mizubayashi, M. Fukuda and S. Miyazaki, "Tunnel Current and Wearout Phenomena in Sub-5nm Oxides", Proc. 8th Int. Symp. on Silicon Mat. Sci. Tech. Vol.1 (1998), pp. 730-744.

[98-10] H.J. Mattausch, R. Allinger, M. Kerber and H. Braun, "A Degradation Mechanism of EEPROM Cell Operational Margins which Remains Undetected by Conventional Quality Assurance ", IEEE Electron Device Lett. Vol. 19 (1998), pp. 402-404.

1.3 Metallization and related phenomena

[98-11] Z.J. Radzimski, W.P. Posadowski, S.M. Rossnagel and S. Shingubara, "Directional Copper Deposition Using DC Magnetron Self-Sputtering", J. Vac. Sci. & Tecnol. Vol. B16 (1998), pp. 1102-1106.

[98-12] S. Abdeslam, and S. Shingubara, "Molecular Dynamics Simulation of a Triple Points of Grain Boundaries", Advanced Metallization Conference, Mat. Res. Soc. Symp. Proc. ULSI-XIV (1999), pp. 475-482.

1.4 CVD and Si epitaxial technologies

[98-13] H. Habuka, S. Akiyama, T. Otsuka, M. Shimada and K. Okuyama, "Dominant Chemical Reaction and Species for Silicon Epitaxial Growth in a SiHCl3-H2 System at Atmospheric Pressure in a Horizontal Cold-Wall Reactor", Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis (M. D. Allendorf, M. R. Zachariah, L. Mountziaris and A. H. McDaniel ed.), Electrochem. Soc. Proc. Vol. 98-23 (1998), pp. 239-243.

[98-14] T. Fujimoto , K.Okuyama, S. Yamada and M. Adachi, "Gas-Phase Nucleation in APCVD Thin Film Formation Process Using Various Silicone Vapors/O3 System", Abst. the American Asociate for Aerosol Research '98 (1998), p. 12PG4.

1.5 Atomic scale process

[98-15] S. Yokoyama, N. Ikeda, K. Kajikawa and Y. Nakashima, "Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces", Appl. Surf. Sci. Vol. 130-132 (1998), pp. 352-356.

[98-16] S. Yokoyama, Y. Nakashima and K. Ooba, "Atomic-Layer Deposition of Silicon Nitride", Abst. of IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98) (Invited) (1998), pp. 78

[98-17] K. Ooba, Y. Nakashima, A. Nakajima and S. Yokoyama, "Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method", Extend. Abst.1998 Int. Conf. on Solid State Devices and Materials (1998), pp. 22-23.

1.6 Contamination control

[98-18] S. Yokoyama, H. Tobimatsu, T. Fujii, K. Shibahara, M. Hirose and K. Sakamoto, "Effect of UV/Photoelectron and Photocatalyst Cleaning on the Reliability of Thin Gate Oxides", Proc. of the 44th Meeting of the Institute of Environmental Science and Technology (1998), pp. 210-214.

[98-19] 藤井敏昭、鈴木作、坂本和彦、横山新、廣瀬全孝, "光触媒を用いたUV/光電子法による密閉空間の超清浄化", エアロゾル研究 第13巻 (1998), pp. 110-118.

[98-20] M. Shimada, K. Okuyama, M. Adachi and T. Fujii, "Aerosol Particle Removal at Reduced Pressure by an Electrical Precipitator Using UV/Photoelectron Method", J. Aerosol Sci. Vol. 29 (1998), pp. S1237-S1238.

[98-21] M. Shimada, K. Okuyama, Y. Inoue, M. Adachi and T. Fujii, "Removal of Airborne Particles by a Device Using UV/Photoelectron Method under Reduced Pressure Conditions", J. Aerosol Sci. Vol. 30 (1999), pp. 341-353.

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2 Self assembling technique and quantum structure

2.1 Si quantum dot

[98-22] M. Hirose, "Self-Assembling of Silicon Quantum Dot and Its Application to Novel Nanodevices", Asian Int. Seminar for Young Researchers Int. Workshop on Semiconductor Quantum Structures, 1998.

[98-23] S. Miyazaki, K. Shiba, N. Miyoshi, K. Etoh, A. Kohno and M. Hirose, "Luminescence Study of Self-Assembled", Silicon Quantum Dots, Mat. Res. Proc. Symp. Vol. 536, (1999), pp.45-50.

[98-24] S. Miyazaki, K. Shiba, K. Nakagawa, M. Ikeda, A. Kohno, and M. Hirose, "Optical Properties of Self-Assembled, Nanometer Silicon Dots", Proc. of the Fifth China-Japan Symp. on Thin Films (1998), pp. 37-42.

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3 Light emitting devices

[98-25] H. Sumitomo, Y. Kadoya and M. Yamanishi, "Wideband Deep Penetration of Photon-Number Fluctuations into the Quantum Regime in Series-Coupled Light-Emitting Diodes", Optics Lett. Vol. 24 (1999), pp. 40-42.

[98-26] S. Yamashita, S. Nakamura, S. Kobayashi, T. Ueda, Y. Kadoya and M. Yamanishi, "Controlled Spontaneous Emissions from Current-Driven Semiconductor Microcavity triodes", Appl. Phys. Lett. Vol. 74 (1999), pp. 1278-1280.

[98-27] T.Fujita, Y. Sato, T. Kuitani and T. Ishihara, "Tunable Polariton Absorption of Distributed Feedback Microcavities at Room Temperature", Phys. Rev. B Vol. 57 (1998), pp. 12428-12434.

[98-28] T.Ishihara,"Excitonic Luminescence from Pb-Based Inorganic-Organic Quantum Well Crystals", Advances in Science and Technology 27, Innovative Light Emitting Materials, eds P. Vincenzini and G.C.Righini, Techna Srl (1999), pp. 309-320.

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4 Technologies for intelligent systems

 

 

4.1 Optical interconnection

[98-29] Y. Sasaki, J. Maeda, T. Koishi, K. Hashimoto, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, "High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using a Sapphire Plate", J. Electrochem. Soc. Vol. 146 (1999), pp. 710-712.

4.2 New architecture and circuit

[98-30] H.J. Mattausch and K. Yamada, "Application of Port-Access-Rejection Probability Theory for Integrated N-Port Memory Architecture Optimization ", Electronics Lett. Vol.34 (1998), pp. 861-862

[98-31] K. Yamada, H. Lee, T. Murakami and H.J. Mattausch, "An Area-Efficient Circuit Concept for Dynamical Conflict Management of N-Port Memories with Multi-GBit/s Access Bandwidth ", Proc. of the 24th European Solid-State Circuits Conf. (ESSCIRCﾕ98), pp. 140-143

[98-32] T. Yamanaka, T. Morie, M. Nagata and A. Iwata,"A Stochastic Associative Memory Using Single-Electron Devices and Its Application to Digit Pattern Association", Extend Abst. of the 1998 Int. Conf. Solid State Devices and Materials(SSDM'98), pp. 190-191.

[98-33] T. Morie, S. Sakabayashi, H. Ando, M. Nagata and A. Iwata, "Pulse Modulation Circuit Techniques for Nonlinear Dynamical Systems", Proc. Int. Symp. on Nonlinear Theory and its Application (NOLTA'98), pp. 447-450.

[98-34] H. Ando, T. Morie, M. Nagata and A. Iwata,"Oscillator Networks for Image Segmentation and their Circuits using Pulse Modulation Methods", Proc. 5th Int. Conf. on Neural Information Processing (ICONIP'98), pp. 586-589.

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